Read e-book online Advances in Electronics and Electron Physics, Vol. 72 PDF

By Peter W. Hawkes (Ed.)

ISBN-10: 012014672X

ISBN-13: 9780120146727

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Extra resources for Advances in Electronics and Electron Physics, Vol. 72

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This feature provides an immediate experimental test of the quasi bi-dimensionality of the carrier motion. The spin degree of freedom is however only dependent on the magnitude of B as imposed by the rotational invariance of the Zeeman term. Thus, for r,-related subbands, where to an excellent approximation spin and orbital motions separate, there is a possibility of some kind of “orientational spectroscopy” of the energy levels obtained by tilting the magnetic field. For r,-related subbands the spin-orbit coupling prevents such a simple decoupling.

1986). The effect of a longitudinal electric field is peculiar in that it increases the binding energy of the impurities located near the interface where the carrier wavefunction accumulates under the action of the field, while it decreases the energy of the impurities located near the other interface (see Fig. This feature may explain some reinforcement of the impurity photoluminescence line in p-type doped GaAs quantum wells subjected to a longitudinal field (Miller and Gossard, 1983a). 52 G.

Conversely, the light hole states for the z motion display a heavy hole character for their in-plane motion (see Eq. (17)). As a result of this mass reversal, there should exist crossings between the HH, and LH, levels. The off-diagonal terms replace these crossings by anticrossings. The only parameter-independent conclusion one can draw about the Ts dispersions is that HH,, the topmost lying valence levels, always displays a heavier in-plane mass than predicted by the diagonal approximation. This stems from the negative sign of the energy denominators HH,-HH,, LH,HH, at k, = 0 which implies that all the couplings between HH, and the other valence levels contribute to a lowering the HH, hole energy.

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Advances in Electronics and Electron Physics, Vol. 72 by Peter W. Hawkes (Ed.)


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